In2se3 ferroelectricity
Witrynavan der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field. This work addresses the missing theoretical framework through … WitrynaHere, the atomic structures of different phases, the dynamic mechanism of ferroelectric switching, and the performance/functions of the latest devices of 2D In 2 Se 3 are …
In2se3 ferroelectricity
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Witryna2 lip 2024 · 2D ferroelectricity in van-der-Waals-stacked materials such as indium selenide (In 2 Se 3) has attracted interests because the ferroelectricity is robust …
Witryna4 sty 2024 · Here, we demonstrate the α-In2Se3 ferroelectric semiconductor channel device that integrates non-volatile memory and neural computation functions. Witryna7 godz. temu · The low bending stiffness of atomic membranes from van der Waals ferroelectrics such as α-In2Se3 allow access to a regime of strong coupling between …
Witryna25 lip 2024 · The ferroelectric properties of the γ-In2 Se 3 were measured along in-plane (IP) and out-of-plane (OOP) directions, for the first time, by employing piezo … Witryna4 kwi 2024 · In this study, we have demonstrated artificial synapses using a GaN-based MOS-HEMT integrated with an α-In2Se3 ferroelectric semiconductor. The van der Waals heterostructure of GaN/α-In2Se3 provides a potential to achieve high-frequency operation driven by a ferroelectrically coupled two-dimensional electron gas (2DEG).
Witryna21 sty 2024 · Controlling the polar order in ferroelectric materials may enrich the diversity of their property and functionality, offering new opportunities for the design of novel electronic and optoelectronic devices. In this paper, we report a planar multi-state memory device built upon a two-dimensional (2D) van der Waals layered …
WitrynaIn the present study, 2D In 2 Se 3 flakes down to monolayers are grown by the chemical vapor deposition (CVD) technique on a mica substrate with their structural, optical and ferroelectric properties being studied. The effect of growth parameters (time of growth and Ar flow rate) on the shape and size of the deposited flakes was studied. litch pinWitryna20 sie 2024 · An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor α -In 2 Se 3 is embedded between two single-layer graphene electrodes. imperial officially licensed nfl furnitureWitryna13 sty 2024 · Ferroelectric tunnel junctions (FTJs) have great potential for application in high-density non-volatile memories. Recently, α-In2Se3 was found to exhibit robust in … imperial offroad camperWitryna12 gru 2024 · The correlated polymorphism and ferroelectricity in 2D In 2 Se 3 provide vast opportunities in tailoring the FE structures and … litch parkWitryna31 mar 2024 · In particular, we demonstrate how the intercoupled ferroelectric nature of α-In 2 Se 3 allows to nonvolatilely switch between n - i and n - i - n type junction … litchpark azWitrynaHere, we demonstrate ferroelectric tunnel junctions that use α-In2Se3 as the ferroelectric barrier, and MoS2 and Ti/Au as asymmetric contacts. The tunnelling barrier can be modified effectively by the reversal of α-In2Se3 ferroelectric polarization, which results in a TER greater than 10 4 at room temperature. Our results suggest that Van … imperial offshoreWitryna10 kwi 2024 · We study the magneto-optical Kerr effect (MOKE) of the two-dimensional heterostructure CrI3/In2Se3/CrI3 by using density functional theory calculations and symmetry analysis. The spontaneous polarization in the In2Se3 ferroelectric layer and the antiferromagnetic ordering in CrI3 layers break the mirror symmetry and the … imperial og ac and ref