Webtechnology to have an effective K of about 3.0. Fig. 4 shows that the use of Low-K dielectrics allows for an RC reduction close to 20% [4]. Other features of this metallization technology are discussed elsewhere [2 ]. -40 -30 -20 -10 0 10 0 20 40 80 100 % Change in RC Product Cumulative Percent FSG Low-k Etch #1 Etch #2 Fig. 3. WebAug 25, 1997 · SPIE Digital Library Proceedings. Results on electrical characterization of test structures with fluorosilicate glass (FSG) deposited in four different chemical vapor …

UMC says 90-nm process is offered in low-k, FSG versions (Updated)

WebThe advantage of low-k dielectrics is significant for certain designs. Agere Systems, which recently announced that it is using TSMC’s low-k based 0.13-um process for its … Webdielectric Type 3 significantly outperformed the low-k dielectric treatments. Although FSG glass is not a low-k dielectric, the combination of Cu and FSG provides good Figure 2 DuraPlusÔ Probe Data (top initial Touch Down-Bottom after 1600 TD) Figure 3. Basic 2 level Cu-low K film stack, (L) with passivation directly under Al pad, (R) no kronos workforce login carle

aip.scitation.org

WebJan 23, 2004 · NEW TRIPOLI, Penn.–The battle between spin-on and CVD low-k materials for semiconductor production is being lost to the fluorinated silicate glass (FSG) … Weblow-k implementation increases the production cost by necessitating two extra metallization layers with Cu / FSG. The major choice however is what low-k production method is more suitable – CVD or spin-on, which differ in how they deposit a thin ILD film … kronos workforce login cavenders